Chip bonding apparatus and method of manufacturing semiconductor device using the apparatus

ABSTRACT

A chip bonding apparatus includes: a bonding contact configured to apply a bonding force to a semiconductor chip disposed on a substrate, the bonding contact having a first surface configured to face the semiconductor chip and a second surface opposite the first surface, the bonding contact including a protruding portion on the first surface, the protruding portion configured to contact the semiconductor chip, the bonding contact including a cavity formed in a region vertically overlapping the protruding portion, a heater disposed to be in contact with the second surface of the bonding contact to cover the cavity, and configured to heat the bonding contact, a bonding head disposed above the heater and configured to transmit the bonding force, and a partition wall structure protruding from a bottom surface of the cavity to partition an inner space of the cavity.

CROSS-REFERENCE TO RELATED APPLICATION(S)

This application claims priority under 35 U.S.C. 119 to Korean PatentApplication No 10-2020-0075189 filed on Jun. 19, 2020 in the KoreanIntellectual Property Office, the disclosure of which is hereinincorporated by reference in its entirety.

BACKGROUND

The present inventive concept relates to a chip bonding apparatus and amethod of manufacturing a semiconductor device using the chip bondingapparatus.

As electronic products have become smaller, semiconductor chips in aform of flip chips that do not use wire bonding are widely used. In suchflip chip-type semiconductor chips, a plurality of electrodes are formedon a lower surface of the semiconductor chips, and are bonded toconnection terminals formed on a substrate through solder bumps.

As a method of bonding flip chip-type semiconductor chips, a method ofthermal compression bonding is used. Such thermocompression bonding isperformed with a bonding tool and a bonding head equipped with a heaterby heating a semiconductor chip with a heater while pressing thesemiconductor chip with a bonding tool. Therefore, for high mountingquality, it is beneficial to uniformly press and heat the semiconductorchip as a whole and throughout the semiconductor chip. However, in aprocess in which heat is conducted from the heater to the semiconductorchip through the bonding tool, the semiconductor chip may be unevenlyheated by the bonding tool, resulting in deformation or bonding failureof the semiconductor chip.

SUMMARY

An aspect of the present inventive concept is to provide a chip bondingapparatus in which deformation of a semiconductor chip or bondingdefects occurring in a semiconductor chip are reduced by uniformlyheating a semiconductor chip in a bonding process.

According to an aspect of the present inventive concept, a chip bondingapparatus, includes: a bonding contact configured to apply a bondingforce to a semiconductor chip disposed on a substrate, the bondingcontact having a first surface configured to face the semiconductor chipand a second surface opposite the first surface, the bonding contactincluding a protruding portion on the first surface, the protrudingportion configured to contact the semiconductor chip, the bondingcontact including a cavity formed in a region vertically overlapping theprotruding portion, a heater disposed to be in contact with the secondsurface of the bonding contact to cover the cavity, and configured toheat the bonding contact, a bonding head disposed above the heater andconfigured to transmit the bonding force, and a partition wall structureprotruding from a bottom surface of the cavity to partition an innerspace of the cavity.

According to an aspect of the present inventive concept, a chip bondingapparatus, includes: a bonding tool having a first surface configured tocontact an object to be bonded and a second surface opposite the firstsurface, the second surface having a first region in which a cavity isformed and a second region disposed at a periphery of the first region,a heater disposed to be in contact with the second surface to cover thecavity of the bonding tool and configured to heat the bonding tool, anda partition wall structure protruding from a bottom surface of thecavity to partition an internal space of the cavity into a plurality ofregions, the partition wall structure positioned at a lower level thanthe second surface.

According to an aspect of the present inventive concept, a chip bondingapparatus, includes: a heater having a first surface and a secondsurface opposite the first surface, the heater including a first regionand a second region spaced apart from each other by a first trenchpenetrating through the first and second surfaces, the first regionconfigured to be heated to a first temperature, the second regiondisposed at a periphery of the first region and configured to be heatedto a second temperature higher than the first temperature, a bondingtool having a third surface in contact with the first surface and havinga second trench extending from the first trench, and a fourth surfaceopposite the third surface and configured to contact an object to bebonded to apply a bonding load to the object, and a bonding headdisposed on the second surface of the heater, the bonding headconfigured to transmit the bonding load to the object through theheater.

BRIEF DESCRIPTION OF DRAWINGS

The above and other aspects, features, and advantages of the presentinventive concept will be more clearly understood from the followingdetailed description, taken in conjunction with the accompanyingdrawings, in which:

FIG. 1 is a schematic side view of a chip bonding apparatus according toan example embodiment of the present inventive concept;

FIG. 2 is a perspective view of the bonding tool shown in FIG. 1 ;

FIG. 3 is a side cross-sectional view taken along line I-I′ of FIG. 2 ;

FIGS. 4A and 4B are cross-sectional views illustrating various bondingtools that can be employed in the chip bonding apparatus according to anexample embodiment of the present inventive concept;

FIG. 5 is a view illustrating a process of bonding a chip with the chipbonding apparatus of FIG. 1 ;

FIGS. 6A and 6B are graphs of surface temperature of a chip bonded by achip bonding apparatus according to a comparative example and an exampleof the present inventive concept;

FIG. 7 is a schematic side view of a chip bonding apparatus according toan example embodiment of the present inventive concept;

FIG. 8 is a partially exploded perspective view illustrating the heaterand the bonding tool shown in FIG. 7 ;

FIG. 9 is a side cross-sectional view taken along line II-II′ of FIG. 8;

FIG. 10 is a view illustrating a process of bonding a chip with the chipbonding apparatus of FIG. 8 ;

FIGS. 11A and 11B are overhead cross-sectional views illustratingvarious heaters that can be employed in the chip bonding apparatusaccording to example embodiments of the present inventive concept;

FIGS. 12 and 13 illustrate various examples of the chip bondingapparatus according to example embodiments of the present inventiveconcept;

FIG. 14A is a graph illustrating surface temperature of a chip bonedwith a chip bonding apparatus according to a comparative example of thepresent inventive concept; and

FIG. 14B is a graph illustrating surface temperature of a chip bonedwith a chip bonding apparatus according to an example embodiment of thepresent inventive concept.

DETAILED DESCRIPTION

Hereinafter, embodiments of the present inventive concept will bedescribed with reference to the accompanying drawings.

FIG. 1 is a schematic side view of a chip bonding apparatus according toan example embodiment of the present inventive concept, FIG. 2 is aperspective view of the bonding tool shown in FIG. 1 , and FIG. 3 is aside cross-sectional view taken along line I-I′ of FIG. 2 .

Referring to FIG. 1 , a chip bonding apparatus 10 according to thepresent example embodiment is an apparatus for bonding and mountingsemiconductor chips C1, C2, and C3 as an object to be bonded to asubstrate W such as a wafer. The chip bonding apparatus 10 may include abonding tool 100, a heater 200 and a bonding head 300. The bonding tool100 may transfer heat and pressure to semiconductor chips C1, C2, and C3to thermally compress the semiconductor chips C1, C2 and C3. The bondingtool 100 may have a cavity CA on one surface. The heater 200 may coverthe cavity CA and may be connected to the bonding tool 100 to transferheat to the semiconductor chips C1, C2 and C3 through the bonding tool100. The bonding head 300 may be connected to the heater 200 to transferpressure to the bonding tool 100 through the heater 200. The pressuretransferred to the bonding tool 100 may be transferred to thesemiconductor chips C1, C2 and C3. The bonding tool 100 may be formed ofa heat-conductive material, for example, a metal or a compound of metal,such as aluminum, stainless steel, titanium, chromium, tungsten, etc.The chip bonding apparatus 10 may further include a through-hole TH1penetrating through the heater 200 and the bonding head 300, and apressure control unit 400 connected to the through-hole TH1 to inject orexhaust gas into or from the cavity CA to adjust internal pressure ofthe cavity CA. For example, the pressure control unit 400 may be apressure controller or a pressure supply adjusting and/or supplying theinternal pressure of the cavity CA.

The substrate W to which the semiconductor chips C1, C2, and C3 arebonded may be mounted on a stage CT such as a chuck table. In an exampleembodiment, the substrate W may have undergone a chemical mechanicalpolishing process such that a connection terminal CP is exposed on amounting surface on which the semiconductor chips C1, C2, and C3 will beattached.

The stage CT may include a base plate BP, a stage heater SH heating thesubstrate W to a predetermined temperature, and a stage plate SPdisposed on the stage heater SH and on which the substrate W is mounted.A solder bump B may be located below the semiconductor chips C1, C2, andC3, and the solder bump B may be disposed below the semiconductor chipsC1, C2, and C3 while being fixed by a bonding film F. For example,solder bumps B may be attached on the bonding film F, and the solderbumps B may be disposed under the semiconductor chips C1, C2 and C3together with the bonding film F. When the semiconductor chips C1, C2,and C3 are pressed by the chip bonding apparatus 10, the bonding film Fmay melt in a bonding region to which the semiconductor chips C1, C2,and C3 are bonded, seal/fill a space between the semiconductor chips C1,C2, and C3 and a substrate W, and bond the substrate W and thesemiconductor chips C1, C2, and C3.

The bonding head 300 may move in an X-axis, Y-axis, and Z-axis by adriving device, and may move the bonding tool 100 so that the pluralityof semiconductor chips C1, C2, and C3 are sequentially bonded on thesubstrate W by thermocompression bonding. In an example embodiment, thebonding head 300 may apply a bonding load of 100 to 300N to the bondingtool 100. For example, the bonding load may be a force to press thesemiconductor chips C1, C2, and C3 to bond on the substrate W. Forexample, the bonding load may correspond to a bonding force to applypressure on the semiconductor chips C1, C2 and C3.

The heater 200 may be located between the bonding head 300 and thebonding tool 100 to transmit a bonding load applied from the bondinghead 300 to the bonding tool 100 thereunder, and may heat the bondingtool 100. In an example embodiment, the heater 200 may be a multilayerceramic heater. In addition, the heater 200 may be disposed to be incontact with a second surface S2 of the bonding tool 100 to cover thecavity CA of the bonding tool 100. The heater 200 may be heated to arange of about 25° C. to 500° C., and in an example embodiment, theheater 200 may be heated to a temperature of about 300° C.

It will be understood that when an element is referred to as being“connected” or “coupled” to or “on” another element, it can be directlyconnected or coupled to or on the other element or intervening elementsmay be present. In contrast, when an element is referred to as being“directly connected” or “directly coupled” to another element, or as“contacting” or “in contact with” another element, there are nointervening elements present at the point of contact.

The bonding tool 100 may move up and down according to the movement ofthe bonding head 300 to sequentially thermally press the semiconductorchips C1, C2, and C3 disposed on the substrate W, e.g., by athermocompression bonding process. The bonding tool 100 may heat thesemiconductor chips C1, C2, and C3 to melt the solder bump B disposedbelow the semiconductor chips C1, C2, and C3 to electrically connect thesemiconductor chips C1, C2, and C3 to connection terminals CP of thesubstrate W. The bonding tool 100 may be described as a bonding contact,or bonding cap (e.g., that forms a cap on the chip bonding apparatus 10,formed on an end of a body that includes the bonding head 300, theheater, and the bonding tool 100).

Referring to FIGS. 2 and 3 , when viewed from above (e.g., in a planview), the bonding tool 100 may have a rectangular shape, have a firstsurface S1 and a second surface S2, opposite each other, and may have abody portion 110 having a predetermined thickness T1. For example, anedge of the body portion 110 may have the thickness T1 in a verticaldirection. A cavity CA may be formed in the second surface S2 of thebody portion 110, and a protruding portion 120 may be disposed/formed onthe first surface S1 thereof. A lower surface 122 of the protrudingportion 120 may be provided to have a larger area than the semiconductorchips C1, C2, and C3, but is not limited thereto, and according toexample embodiments, the protruding portion 120 may also have the samearea as the semiconductor chips C1, C2, and C3. For example, the cavityCA may be formed in the body portion 110 and may have a rectangularbottom surface having four sides, and side surfaces of the cavity CA mayextend upward from the four side surfaces of the bottom surface.

Spatially relative terms, such as “beneath,” “below,” “lower,” “above,”“upper” and the like, may be used herein for ease of description todescribe one element's or feature's relationship to another element(s)or feature(s) as illustrated in the figures. It will be understood thatthe spatially relative terms are intended to encompass differentorientations of the device in use or operation in addition to theorientation depicted in the figures. For example, if the device in thefigures is turned over, elements described as “below” or “beneath” otherelements or features would then be oriented “above” the other elementsor features. Thus, the term “below” can encompass both an orientation ofabove and below. The device may be otherwise oriented (rotated 90degrees or at other orientations) and the spatially relative descriptorsused herein interpreted accordingly.

The cavity CA may be limitedly disposed in a first region A1, which is aregion, overlapping the protruding portion 120 of the second surface S2.For example, the cavity CA may be formed in the first region A1 of thebonding tool 100, and the cavity CA may be limited to the first regionA1. The first region A1 of the bonding tool 100 may be a regionvertically overlapping the protruding portion 120 of the bonding tool100. The cavity CA may have a shape corresponding to the protrudingportion 120 and may have an area smaller than that of the protrudingportion 120, e.g., in a plan view. A region disposed at a periphery ofthe first region A1 may be defined as a second region A2, a region inwhich the cavity CA is not disposed. For example, the second region A2may be a region which does not vertically overlap the protruding portion120. A bottom surface BS of the cavity CA may be formed as a flatsurface, an inclined surface or a curved surface according to exampleembodiments.

Since the heater 200 is disposed on the second surface S2 of the bondingtool 100 to cover the cavity CA, the cavity CA may maintain a sealedstructure. For example, the cavity CA may be isolated from outside bythe bonding tool 100 and the heater 200. A partition wall structure 130reinforcing rigidity of the cavity CA and dividing an internal space maybe disposed inside the cavity CA. The partition wall structure 130 mayprotrude from the bottom surface BS of the cavity CA. In certainembodiments, the partition wall structure 130 may be disposed above thebottom surface BS of the cavity CA. In an example embodiment, the cavityCA may have a height/depth T2 of 0.5 mm to 1.5 mm (e.g., a height/depthhaving a value between 0.5 mm and 1.5 mm), and a sidewall 121 of thecavity CA may have a thickness W1 in a horizontal direction equal to 10%to 20% of a total length of the protruding portion 120. For example, thetotal length of the protruding portion may be a length of the protrudingportion 120 in a horizontal direction and in a direction perpendicularto a side surface of the bonding tool 100. The cavity CA may be disposedin a region overlapping the protruding portion 120 to prevent heattransferred from the heater 200 from being directly transferred to thecentral region CTA of the protruding portion 120, and to prevent heatfrom being concentrated in the central region CTA of the protrudingportion 120 by allowing heat to be transferred through the peripheralregion SA. For example, the cavity CA may prevent heat from beingdirectly and vertically transferred to the central region CTA. When acavity is not disposed in a bonding tool, the heat conducted from aheater is conducted from a second surface of the bonding tool to a firstsurface through a central region of the bonding tool. Thus, theperipheral region SA of the protruding portion is deprived of heatthrough the sidewall 121, such that it is cooled relatively faster thanthe central region CTA. Therefore, when there is no cavity CA in thebonding tool 100, the temperature of the central region CTA of theprotruding portion 120 is higher than the temperature of the peripheralregion SA, and thus a heat distribution imbalance between the centralregion and the peripheral region may cause temperature imbalance betweenthe central region and a peripheral region of the bonded semiconductorchips C1, C2, and C2. If the heat distribution imbalance occurs,deformation such as warpage of the semiconductor chips may occur in theprocess of bonding the semiconductor chips C1, C2, and C3, and also, thedeformed semiconductor chips C1, C2, and C3 may cause defects due toabnormal/improper bonding. In an example embodiment, heat may beprevented from being concentrated in the central region CTA of theprotruding portion 120 by the cavity CA, so that the temperaturedeviation of the protruding portion 120 may be greatly reduced. Forexample, the cavity CA may be beneficial for a relatively uniformtemperature distribution throughout the bottom surface of the protrudingportion 120. This will be described in detail later.

An inside of the cavity CA may be filled with air. However, the presentinventive concept is not limited thereto, and a gas having low thermalconductivity, such as argon gas or nitrogen gas, may be filled in thecavity, or a mixture of these gases may be filled in the cavity.

A partition wall structure 130 may be formed to protrude from the bottomsurface BS of the cavity CA, and may be disposed across the bottomsurface BS to partition the cavity CA into a plurality of regions. Thepartition wall structure 130 may have a rib structure connecting sidesurfaces of the cavity CA, facing each other, and the partition wallstructure 130 may be beneficial to effectively prevent the sidewall 121from being damaged by the pressure transmitted from the bonding head300. For example, each partition wall of the partition wall structure130 may connect a pair of sidewalls 121 facing each other among thesidewalls 121 of the cavity CA. For example, the partition wallstructure may have a cross or lattice shape as shown in FIG. 2 . Forexample, the partition wall structure 130 may divide inner space of thecavity CA, and may be formed in a point symmetrical manner or arotationally symmetrical manner with respect to the center of the cavityin a plan view.

For example, the partition wall structure 130 may be disposed at a lowerlevel than the second surface S2, and may be disposed to have a gap G of0.2 mm to 0.5 mm from the second surface S2. For example, the gap G maybe a height difference between the second surface S2 and an uppersurface (e.g., a top surface) of the partition wall structure 130. Dueto this structure, an upper portion of the partition wall structure 130may be disposed so as not to contact the heater 200, so that heat fromthe heater 200 may not be directly transmitted to the partition wallstructure 130 and to the protruding portion 120 through the partitionwall structure 130. In addition, the upper portion of the partition wallstructure 130 may be disposed to have a gap G with the heater 200, sothat respective regions CA1 and CA2 of the cavity partitioned by thepartition wall structure 130 may be connected to each other to have thesame internal pressure.

Depending on the example embodiment, a through-hole TH1 penetratingthrough the bonding head 300 and the heater 200 may be formed, and thethrough-hole TH1 may be connected to a pressure control unit 400, and agas or air disposed in the cavity CA may be removed through thethrough-hole TH1 to reduce the internal pressure of the cavity CA, or agas or air may be injected into the cavity CA to increase the internalpressure of the cavity CA. Thereby, the pressure applied to thesemiconductor chips C1, C2, and C3 from the protruding portion 120 maybe locally adjusted. For example, since the pressure applied from theprotruding portion 120 may be prevented from being concentrated to theperipheral region SA, uniform pressure may be transferred to thesemiconductor chips C1, C2, and C3 as a whole.

FIGS. 4A and 4B are cross-sectional views illustrating various bondingtools that can be employed in the chip bonding apparatus according to anexample embodiment.

FIG. 4A illustrates a case in which a bottom surface BSA of the cavityCA of the bonding tool 100A is formed as an inclined surface inclineddownwardly toward the central region, e.g., in a direction approachingthe central region of the bottom surface BSA. FIG. 4B illustrates a casein which a bottom surface BSB of the cavity CA of the bonding tool 100Bis formed as a concave surface and/or a curved surface (e.g., aconcavely curved surface) inclined downwardly toward the central region,e.g., in a direction approaching the central region of the bottomsurface BSB. In the case of the bonding tool 100B of FIG. 4B, a sidesurface 121B of the protruding portion 120B is formed as an inclinedsurface, so that the rigidity of the protruding portion 120B may befurther improved. For example, the cavity CA may have a varying depthwithin a range between 0.5 mm and 1.5 mm.

FIG. 5 is a view illustrating a process of bonding the semiconductorchip C2 with the chip bonding apparatus 10 of FIG. 1 , and FIGS. 6A and6B are graphs of surface temperatures of a semiconductor chip bonded bya chip bonding apparatus according to a comparative example and anexample embodiment of the present inventive concept respectively.

Referring to FIG. 5 , first pressure P1 applied from the bonding head300 may be transferred to the bonding tool 100 through the heater 200,but may be distributed and transmitted to second pressure P2 applied toa lower portion of a surrounding region SA and third pressure P3 appliedto the lower portion of the central region CTA, due to the cavity CAformed in a central region CTA.

Due to the cavity CA, the heat H1 transferred from the heater 200 maynot directly be transferred to the central region CTA of the protrudingportion 120 but may be transferred to the peripheral region SA and tothe central region CTA through the peripheral region SA. For example,direct heat transferred from the heater 200 to the central region CTA ofthe protruding portion 120 may be blocked by the cavity CA, and the heattransferred through the peripheral region SA of the protruding region120 may be distributed and conducted to the central region CTA.Therefore, the heat distribution imbalance in which the temperature ofthe central region CTA of the protruding portion 120 is relatively highmay be improved/prevented.

FIG. 6A is a comparative example, showing a surface temperaturedistribution of a semiconductor chip bonded by a chip bonding apparatusin which no cavity is formed in the protruding portion. It was measuredthat the central region AR1 of the bonded semiconductor chip was 283° C.and the peripheral region AR2 was 260° C. Therefore, the temperaturedeviation of the central region AR1 from the peripheral region AR2 was23° C.

On the other hand, in the case of an example embodiment, the centralregion AR3 of the bonded semiconductor chip was measured to be 264° C.,and the peripheral region AR4 was measured to be 265° C. Therefore, thetemperature deviation of the central region AR3 from the peripheralregion AR4 was 1° C., and the temperature difference between the centralregion and the peripheral region was reduced in the example embodimentcompared to the comparative example. Accordingly, the example embodimenthas an effect of reducing the temperature deviation of the bondedsemiconductor chip compared to the comparative example. In addition,since the heater 200 is prevented from being unnecessarily heated, thereis an effect of reducing energy consumed in a thermocompression bondingprocess.

FIG. 7 is a schematic side view of a chip bonding apparatus according toan example embodiment of the present inventive concept, FIG. 8 is apartially exploded perspective view illustrating the heater and thebonding tool shown in FIG. 7 , and FIG. 9 is a side cross-sectional viewtaken along line II-II′ of FIG. 8 .

Referring to FIGS. 7 and 8 , a chip bonding apparatus 1010 according toan example embodiment of the present inventive concept is different fromthe example embodiments described above, e.g., with respect to FIG. 1 inthat a heater 1200 includes a plurality of regions spaced apart fromeach other, and a trench TR2 is formed in the bonding tool 1100 wherevertically corresponding regions to the spaced apart portions betweenthe plurality of regions of the heater 1200. An opening or a trench TR1is formed between the separated regions. Other configurations are thesame as those of the previously described embodiment, and thus detaileddescriptions thereof are omitted.

Referring to FIG. 7 , the chip bonding apparatus 1010 according to thepresent example embodiment may include a bonding tool 1100 forperforming a thermocompression process on semiconductor chips C1, C2,and C3, a heater 1200 for heating the bonding tool 1100, and a bondinghead 1300 connected to the heater 1200 to transmit pressure to thebonding tool 1100.

Referring to FIGS. 8 and 9 , the heater 1200 may have a first region1210 and a second region 1220 separated from each other by a firsttrench TR1. The first region 1210 may be disposed in a region verticallyoverlapping a protruding portion 1120, and the second region 1220 may bedisposed at a periphery of the first region 1210. The first region 1210may be heated to a relatively lower temperature than the second region1220. For example, the first region 1210 may be heated to 280° C., andthe second region 1220 may be heated to 300° C. Accordingly, the heater1200 may heat the bonding tool 1100 connected thereunder to a differenttemperature for each region.

The bonding tool 1100 connected to the lower portion of the heater 1200may have a second trench TR2 formed to extend from the first trench TR1,and the second trench TR2 may be formed to a predetermineddepth/distance T3 from a surface (CS) of the protruding portion 1120.For example, the side surfaces of the first trench TR1 may be coplanarwith the side surfaces of the second trench TR2.

Due to this structure, heat emitted from the first region 1210 and thesecond region 1220 of the heater 1200 may be separately conducted toeach region of the bonding tool 1100. This will be described in detailwith reference to FIG. 10 . FIG. 10 is a view illustrating a process ofbonding a chip with the chip bonding apparatus of FIG. 8 .

Referring to FIG. 10 , first heat H4 applied from a first region 1210 ofthe heater 1200 may be a temperature lower than second heat H5 appliedto the second region 1220. The second heat H5 is dispersed/divided intothird heat H6 conducted to a peripheral region SAB of a bonding tool1100 and fourth heat H7 conducted to a central region CTAB. The firstheat H4 conducted through the central region CTAB of the bonding tool1100 is combined with the fourth heat H7 and conducted to be the fifthheat H8 in the central region CTAB of a semiconductor chip C2. Inaddition, the third heat H6 is conducted to be the sixth heat H9 in theperipheral region SAB of the semiconductor chip C2 as the sixth heat H9.

For example, since the first heat H4 and the second heat H5 areseparately conducted because of a first trench TR1, the second heat H5generated from the second region 1220 of the heater 1200 may not bedirectly conducted to the first region 1210 of the heater 1200. Inaddition, since the fourth heat H7, which is a part of the second heatH5, is combined with the first heat H4 and is conducted to be the fifthheat H8 in the central region CTAB of the semiconductor chip C2, andonly the sixth heat H9 is conducted to the peripheral region SAB of thesemiconductor chip C2, the deviation of heat applied to thesemiconductor chip C2 may be reduced.

FIGS. 14A and 14B are graphs of surface temperatures of a chip bonded bya chip bonding apparatus of a comparative example and a chip bondingdevice according to an example embodiment of the present inventiveconcept shown in FIG. 8 respectively.

FIG. 14A is a comparative example, showing a surface temperaturedistribution of a semiconductor chip bonded by a chip bonding apparatusin which a heater is formed of one region. For example, the temperatureof the heater is not controlled locally but controlled as a whole. Acentral region AR5 of the bonded semiconductor chip was measured to be255° C., and a peripheral region AR6 was measured to be 240° C.Therefore, a temperature deviation of the central region AR5 from theperipheral region AR6 reached 15° C.

On the other hand, in an example embodiment, it was measured that acentral region AR7 of the bonded semiconductor chip was 246° C. and aperipheral region AR8 was 240° C. Therefore, the temperature deviationof the central region AR7 from the peripheral region AR8 is reduced to6° C. The temperature difference between the central region and theperipheral region is reduced as compared to the comparative example,thereby having a relatively uniform temperature distribution as awhole/throughout the measured chip.

A trench partitioning the heater into a plurality of regions may havevarious shapes. FIGS. 11A and 11B are overhead cross-sectional views (orplan views) illustrating various heaters that can be employed in thechip bonding apparatus according to example embodiments of the presentinventive concept.

FIG. 11A shows an example in which two trenches TR11 and TR12 are formedin a heater 1200A, and the heater 1200A is partitioned into threeregions 1210A, 1220A, and 1230A. Compared to the example embodimentdescribed above, e.g., with respect to FIG. 7 , since the heat generatedfrom the heater 1200A can be further subdivided and conductedseparately, the temperature distribution can be more preciselycontrolled.

FIG. 11B shows an example in which a trench TR13 is expanded to be closeto each vertex region 1230 and/or peripheral area of the heater 1200B.This kind of partition design may further reduce a temperature deviationbetween each vertex region 1230 of the heater 1200B and other regions.

FIGS. 12 and 13 show various examples of a chip bonding apparatusaccording to example embodiments of the present inventive concept.

In the chip bonding apparatus 2010 of FIG. 12 , heat conductive layers2500 and 2600 are further disposed between the heater 2200 and thebonding head 2300. The heat conductive layers 2500 and 2600 may bedisposed to correspond to first and second regions 2210 and 2220 of theheater 2200 respectively, and a first heat conductive layer 2500 may bedisposed on the first region 2210, and a second heat conductive layer2600 may be disposed on the second region 2220. A through-hole TH2 maybe formed in the bonding head 2300, a coolant supply portion 2400supplying a coolant to the through-hole TH2, and only the first region2210 may be selectively cooled, such that the temperature of the firstregion 2210 may be lower than the temperature of the second region 2220.The first and second conductive layers 2500 and 2600 may be made of thesame material, but in certain embodiments, the first heat conductivelayer 2500 may be made of a material having thermal conductivity higherthan that of the second heat conductive layer 2600 in order to quicklytransmit heat from the first region 2210 to the coolant, therebyenhancing a cooling effect of the coolant supply portion 2400. Inaddition, the second heat conductive layer 2600 may be made of aninsulating material for blocking/reducing heat transfer to the bondinghead 2300.

Components described as thermally connected or in thermal communicationare arranged such that heat will follow a path between the components toallow the heat to transfer from the first component to the secondcomponent. Simply because two components are part of the same device orpackage does not make them thermally connected. In general, componentswhich are heat-conductive and directly connected to otherheat-conductive or heat-generating components (or connected to thosecomponents through intermediate heat-conductive components or in suchclose proximity as to permit a substantial transfer of heat) will bedescribed as thermally connected to those components, or in thermalcommunication with those components. On the contrary, two componentswith heat-insulative materials therebetween, which materialssignificantly prevent heat transfer between the two components, or onlyallow for incidental heat transfer, are not described as thermallyconnected or in thermal communication with each other. The terms“heat-conductive” or “thermally-conductive” do not apply to a particularmaterial simply because it provides incidental heat conduction, but areintended to refer to materials that are typically known as good heatconductors or known to have utility for transferring heat, or componentshaving similar heat conducting properties as those materials.

Compared with the example embodiment described above with respect toFIG. 12 , the chip bonding apparatus 3010 of FIG. 13 is different inthat a central region of the first heat conductive layer 3500 is removedto form a cavity 3700, and a through-hole TH3 is connected to the cavity3700 and the coolant supplied from the coolant supply portion 3400 issupplied to the cavity 3700. For example, the first heat conductivelayer 3500 may have an opening in its central area. Since the coolant isdirectly supplied to the cavity 3700, there may be an advantage in thata cooling speed is faster than a case in which a coolant passes throughthe bonding head 2300 as shown in FIG. 13 . Other parts are the same asthose of the above-described example embodiment shown in FIG. 13 , so adetailed description thereof will be omitted.

According to an embodiment of the present disclosure, a method ofmanufacturing a semiconductor device using the above described chipbonding apparatus is provided. First, the semiconductor chips C1, C2 andC2 described above may be manufactured by a wafer fabricating processesand then may be divided into semiconductor chips C1, C2 and C3. Thewafer fabricating processes may include providing a substrate andforming various semiconductor device elements, e.g., transistors,resistors, etc. on the substrate in a front end of line (FEOL) process.Various connection lines and via holes connecting the varioussemiconductor device elements may be formed above the semiconductordevice elements on the substrate in a back end of line (BEOL) process.The substrate may be a semiconductor wafer. After forming pads andpassivation layers on the substrate, the substrate may be divided intosemiconductor chips. After the semiconductor chips are fabricated, thesemiconductor chips are bonded on a substrate W by a chip bondingapparatus described in one of the embodiments of the present disclosure.In a chip bonding process, a wafer W may be mounted on a stage CT of achip bonding apparatus, and then semiconductor chips C1, C2 and C3 maybe disposed on the substrate W for the solder bumps B and bonding filmsF to be respectively interposed between the semiconductor chips C1, C2and C3 and the substrate W. The semiconductor chips C1, C2 and C3 may bebonded on the substrate W by a thermocompression process as describedabove. After the semiconductor chips C1, C2 and C3 are bonded on thesubstrate W, the substrate W may be divided into multiple pieces to bepackaged into a plurality of semiconductor devices or the substrate Wmay be packaged as a whole to make a semiconductor device. For example,the semiconductor chips C1, C2 and C3 may be packaged in a semiconductordevice in one embodiment, or may be packaged in different semiconductordevices in another embodiment.

As set forth above, according to the present inventive concept, a chipbonding apparatus and a method of manufacturing a semiconductor deviceusing the chip bonding apparatus have been provided. The apparatus andthe method may reduce deformation of a semiconductor chip bonded by theapparatus and the method, and/or may reduce a bonding failure of thesemiconductor devices.

Various and beneficial advantages and effects of the present inventiveconcept are not limited to the above description, and may be more easilyunderstood in the course of applying specific embodiments of the presentinventive concept.

While the example embodiments have been shown and described above, itwill be apparent to those skilled in the art that modifications andvariations could be made without departing from the scope of the presentinvention as defined by the appended claims.

What is claimed is:
 1. A chip bonding apparatus, comprising: a bondingcontact configured to apply a bonding force to a semiconductor chipdisposed on a substrate, the bonding contact having a first surfaceconfigured to face the semiconductor chip and a second surface oppositethe first surface, the bonding contact including a protruding portion onthe first surface, the protruding portion configured to contact thesemiconductor chip, the bonding contact including a cavity formed in aregion vertically overlapping the protruding portion; a heater disposedto be in contact with the second surface of the bonding contact to coverthe cavity, and configured to heat the bonding contact; a bonding headdisposed above the heater and configured to transmit the bonding force;and a partition wall structure protruding from a bottom surface of thecavity to partition an inner space of the cavity, wherein an uppersurface of the partition wall structure is at a lower level than that ofthe second surface of the bonding contact, wherein the cavity has adepth of 0.5 mm to 1.5 mm, and the partition wall structure is at alevel of 0.2 mm to 0.5 mm lower than the second surface of the bondingcontact.
 2. The chip bonding apparatus of claim 1, wherein the partitionwall structure has a cross or lattice shape, each partition wall of thepartition wall structure connecting a pair of sidewalls facing eachother.
 3. The chip bonding apparatus of claim 1, wherein the cavity hasan area smaller than that of the protruding portion in a plan view. 4.The chip bonding apparatus of claim 1, wherein the bottom surface of thecavity is formed of any one of a flat surface, an inclined surface, anda concave surface.
 5. The chip bonding apparatus of claim 4, wherein theinclined surface and the concave surface are inclined downwardly in adirection approaching a central region of the bottom surface of thecavity.
 6. The chip bonding apparatus of claim 1, wherein at least oneof air, nitrogen gas, and argon gas is filled in the cavity.
 7. The chipbonding apparatus of claim 1, further comprising a through-holepenetrating through the bonding head and the heater and connected to thecavity; and a pressure supply connected to the through-hole, thepressure supply configured to adjust pressure inside the cavity.
 8. Achip bonding apparatus, comprising: a bonding tool configured to contactan object to be bonded and having a surface having a first region inwhich a cavity is formed and a second region disposed at a periphery ofthe first region; a heater disposed to be in contact with the surface tocover the cavity of the bonding tool and configured to heat the bondingtool; and a partition wall structure protruding from a bottom surface ofthe cavity to partition an internal space of the cavity into a pluralityof regions, the partition wall structure positioned at a lower levelthan the surface, wherein the cavity is closed from outside by bottomand side portions of a body portion that forms the bonding tool, whereinthe bonding tool comprises a protruding portion protruding downwards andconfigured to contact the object to be bonded, wherein the cavity has adepth of 0.5 mm to 1.5 mm, and wherein the partition wall structure isat a level of 0.2 mm to 0.5 mm lower than the surface of the bondingtool.
 9. The chip bonding apparatus of claim 8, wherein a depth of thecavity is greater than a thickness, in a vertical direction, of an edgeof the body portion.
 10. The chip bonding apparatus of claim 8, whereinthe partition wall structure is formed in a rotationally symmetricalmanner with respect to the center of the cavity.
 11. The chip bondingapparatus of claim 1, wherein a vertical distance between the bottomsurface of the protruding portion and the bottom surface of the cavityis less than a vertical distance between the bottom surface of thecavity and the second surface of the bonding contact.
 12. The chipbonding apparatus of claim 1, wherein the cavity has a shapecorresponding to a shape of the protruding portion.